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IRFS4229PBF

International Rectifier
Part Number IRFS4229PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Feb 16, 2007
Detailed Description PD - 97080B PDP SWITCH IRFS4229PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain,...
Datasheet PDF File IRFS4229PBF PDF File

IRFS4229PBF
IRFS4229PBF

Overview
PD - 97080B PDP SWITCH IRFS4229PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability Key Parameters VDS min 250 V VDS (Avalanche) typ.
RDS(ON) typ.
@ 10V 300 V 42 m: IRP max @ TC= 100°C 91 A TJ max 175 °C D D G S S D G D2Pak G D S Gate Drain Source Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.
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