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IXFC52N30P

IXYS Corporation
Part Number IXFC52N30P
Manufacturer IXYS Corporation
Description PolarHTTM HiPerFET Power MOSFET
Published Feb 17, 2007
Detailed Description www.DataSheet4U.com Advance Technical Information PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFC52N3...
Datasheet PDF File IXFC52N30P PDF File

IXFC52N30P
IXFC52N30P

Overview
www.
DataSheet4U.
com Advance Technical Information PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFC52N30P VDSS ID25 RDS(on) = 300 V = 32 A = 75 mΩ Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL VISOL FC Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 32 150 52 30 1.
0 10 100 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb ISOPLUS220TM (IXFC) E153432 G D S D = Drain TAB = Drain G = Gate S = Source 1.
6 mm (0.
062 in.
) from case for 10 s 50/60 Hz, RMS, t = 1minute, leads-to-tab Mounting Force 300 2500 11.
.
65/2.
5.
.
15 Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Weight ISOPLUS220 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C 2.
0 g Characteristic Values Min.
Typ.
Max.
300 2.
5 5.
0 ±100 25 250 65 75 V V nA µA µA mΩ Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.
5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved DS99115A(04/05) IXFC 52N30P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.
Typ.
Max.
20 30 3490 VGS = 0 V, VDS = 25 V, f = 1 MHz 550 130 24 VGS = 10 V, VDS = 0.
5 VDSS, ID = ID25 RG = 4 Ω (External) 22 60 20 110 VGS = 10 V, VDS = 0.
5 VDSS, ID = 0.
5 ID25 25 53 1.
25 0.
21 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS220 Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.
5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD Trr QRM Test ...


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