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IXFC80N08

IXYS Corporation
Part Number IXFC80N08
Manufacturer IXYS Corporation
Description (IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM
Published Feb 17, 2007
Detailed Description www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-...
Datasheet PDF File IXFC80N08 PDF File

IXFC80N08
IXFC80N08


Overview
www.
DataSheet4U.
com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFC 80N08 IXFC 80N085 80 V 85 V ID25 RDS(on) 80 A 9 mΩ 80 A 9 mΩ Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings ISOPLUS 220TM 80N08 80N085 80 85 ± 20 ± 30 80 80 75 320 30 1.
0 5 230 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A mJ J V/ns W °C °C °C °C l l l l l G D S G = Gate, S = Source * Patent pending Isolated back surface* D = Drain, Features l 1.
6 mm (0.
062 in.
) from case for 10 s Mounting force 50/60 Hz, RMS t = 1 minute leads-to-tab 300 11.
.
65/2.
4.
.
11 Nm/lb 2500 2 V~ g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsicRectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
80N08 80N085 2.
0 80 85 4.
0 ± 100 TJ = 25°C TJ = 125°C V V nA l l l l l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 250 µA V DS = VGS, ID = 4 mA V GS = ±20 VDC, VDS = 0 V DS = VDSS VGS = 0 V V GS = 10 V, ID = IT Notes 1, 2 DC-DC converters Batterychargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages l 50 µ A 1 mA 9 mΩ l l l Easy assembly: no screws or isolation foils required Space savings High power density Low collector capacitance to ground (low EMI) 98851 (8/01) © 2001 IXYS All rights reserved IXFC 80N08 IXFC 80N085 Symbol Test Conditions Characteristi...



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