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UML12N

Rohm
Part Number UML12N
Manufacturer Rohm
Description General purpose transistor
Published Feb 17, 2007
Detailed Description www.DataSheet4U.com EML12 / UML12N Transistors General purpose transistor (isolated transistor and diode) EML12 / UML1...
Datasheet PDF File UML12N PDF File

UML12N
UML12N

Overview
www.
DataSheet4U.
com EML12 / UML12N Transistors General purpose transistor (isolated transistor and diode) EML12 / UML12N 2SC4617and RB521S-30 are housed independently in a EMT5 or UMT5 package.
zApplications DC / DC converter Motor driver zExternal dimensions (Unit : mm) EMT5 1.
6 0.
5 1pin mark zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 1.
0 0.
5 0.
5 (5) (4) 1.
6 1.
2 (1) (2) (3) 0.
22 0.
13 zStructure NPN Silicon epitaxial planar transistor Schottky barrier diode Each lead has same dimensions Abbreviated symbol : L12 ROHM : EMT5 The following characteristics apply to both Di1 and Tr2.
UMT5 2.
0 1.
3 0.
65 0.
65 0.
9 0.
7 zEquivalent circuit (EML12 / UML12N) (5) (4) (5) (4) 1.
25 Di1 Tr2 0.
2 0.
15 Each lead has same dimensions (1) (2) (3) Abbreviated symbol : L12 ROHM : UMT5 EIAJ : SC-88A zPackaging specifications Type Package Marking Code Basic ordering unit (pieces) EML12 EMT5 L12 T2R 8000 UML12N UMT5 L12 TR 3000 Rev.
A 0.
1Min.
1pin mark (1) (2) (3) 2.
1 1/4 EML12 / UML12N Transistors zAbsolute maximum ratings (Ta=25°C) Di1 Parameter Symbol IO Average revtified forward current Forward current surge peak (60Hz, 1∞) IFSM VR Reverse voltage (DC) Tj Junction temperature Limits 200 1 30 125 Unit mA A V °C Tr2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Symbol VCBO VCEO VEBO IC PD Tj Limits 60 50 7 150 120 150 Unit V V V mA mW °C ∗ ∗ Each terminal mount on a recommended.
Di1 / DTr2 Parameter Power dissipation Storage temperature Symbol Pd Tstg Limits 150 −55 to +125 Unit mW °C ∗ ∗ Each terminal mount on a recommended.
zElectrical characteristics (Ta=25°C) Di1 Parameter Forward voltage Reverse current Symbol VF IR Min.
− − Typ.
0.
40 4.
0 Max.
0.
50 30 Unit V µA Conditions IF=200mA VR=10V Tr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff cu...


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