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IRF8010PBF

Part Number	IRF8010PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Feb 22, 2007
Detailed Description	www.DataSheet4U.com PD - 95505 Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free SMP...
Datasheet	IRF8010PBF PDF File

Overview

www.
DataSheet4U.
com PD - 95505 Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free SMPS MOSFET IRF8010PbF HEXFET® Power MOSFET VDSS 100V RDS(on) max 15mΩ ID 80A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12mΩ l TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Max.
80 57 320 260 1.
8 ± 20 h Units A W W/°C V V/ns °C c e 16 -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.
6mm from case ) 1.
1(10) N•m (lbf•in) Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
––– 0.
50 ––– Max.
0.
57 ––– 62 Units °C/W Notes through are on page 8 www.
irf.
com 1 07/06/04 IRF8010PbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units 100 ––– ––– 2.
0 ––– ––– ––– ––– ––– 0.
11 12 ––– ––– ––– ––– ––– ––– ––– 15 4.
0 20 250 200 -200 nA V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 45A f V µA VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Cos...

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IRF8010PBF HEXFET Power MOSFET - International Rectifier

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