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RJU002N06

Rohm
Part Number RJU002N06
Manufacturer Rohm
Description 2.5V Drive Nch MOS FET
Published Feb 22, 2007
Detailed Description www.DataSheet4U.com RJU002N06 Transistors 2.5V Drive Nch MOS FET RJU002N06 zStructure Silicon N-channel MOS FET zExter...
Datasheet PDF File RJU002N06 PDF File

RJU002N06
RJU002N06


Overview
www.
DataSheet4U.
com RJU002N06 Transistors 2.
5V Drive Nch MOS FET RJU002N06 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) UMT3 2.
0 0.
9 0.
3 zFeatures 1) Low On-resistance.
2) Low voltage drive (2.
5V drive).
0.
2 0.
7 (3) 1.
25 (2) (1) 2.
1 0.
65 0.
65 1.
3 0.
15 zApplications Switching zPackaging specifications Package Type RJU002N06 Code Basic ordering unit (pieces) Taping T106 3000 (1) Source (2) Gate (3) Drain Each lead has same dimensions Abbreviated symbol : ML zInner circuit (3) (2) ∗2 ∗1 ∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE (1) Source (2) Gate (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 PD ∗2 Tch Tstg Limits 60 ±12 ±200 ±800 200 150 −55 to +150 Unit V V mA mA mW °C °C zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 625 Unit °C/W 0.
1Min.
1/2 RJU002N06 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time ∗Pulsed RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf ∗ ∗ ∗ ∗ ∗ Min.
− 60 − 0.
5 − − − 0.
1 − − − − − − − Typ.
− − − − 1.
6 1.
7 2.
2 − 18 7 5 7 7 12 90 Max.
±10 − 1 1.
5 2.
3 2.
4 3.
1 − − − − − − − − Unit µA V µA V Ω Ω Ω S pF pF pF ns ns ns ns Conditions VGS=±12V, VDS=0V ID= 1mA, VGS=0V VDS= 60V, VGS=0V VDS= 10V, ID= 1mA ID= 200mA, VGS= 4.
5V ID= 200mA, VGS= 4V ID= 200mA, VGS= 2.
5V VDS= 10V, ID= 200mA VDS= 10V VGS=0V f=1MHz VDD 30V ID= 100mA VGS...


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