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ZXTP2008Z

Zetex Semiconductors
Part Number ZXTP2008Z
Manufacturer Zetex Semiconductors
Description PNP LOW SATURATION MEDUIM POWER TRANSISTOR
Published Feb 22, 2007
Detailed Description www.DataSheet4U.com ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24...
Datasheet PDF File ZXTP2008Z PDF File

ZXTP2008Z
ZXTP2008Z

Overview
www.
DataSheet4U.
com ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.
5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions.
FEATURES • 5.
5 amps continuous current • Up to 20 amps peak current • Very low saturation voltages • Exceptional gain linearity down to 10mA • Excellent high current gain hold up SOT89 APPLICATIONS • DC - DC converters • MOSFET gate drivers • Charging circuits • Power switches • Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE 7" TAPE WIDTH 12mm embossed QUANTITY PER REEL 1000 units ZXTP2008ZTA DEVICE MARKING 949 TOP VIEW ISSUE 1 - JUNE 2005 1 ZXTP2008Z ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Operating and storage temperature range T j , T stg PD (a) SYMBOL BV CBO BV CEO BV EBO IC I CM PD LIMIT -50 -30 -7 -5.
5 -20 1.
5 12 2.
1 16.
8 -55 to 150 UNIT V V V A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R ⍜ JA R ⍜ JA VALUE 83 60 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm x 1.
6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.
6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - JUNE 2005 2 ZXTP2008Z CHARACTERISTICS ISSUE 1 - JUNE 2005 3 ZXTP2008Z ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-base breakdown voltage SYMBOL BV CBO MIN.
-50 -50 -30 -7.
0 TYP.
-70 -70 -40 -8.
0 <-1 -20 -0.
5 Collector cut-off current I CER R...


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