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ZXTP2012G

Zetex Semiconductors
Part Number ZXTP2012G
Manufacturer Zetex Semiconductors
Description PNP MEDIUM POWER LOW SATURATION TRANSISTOR
Published Feb 22, 2007
Detailed Description www.DataSheet4U.com ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 3...
Datasheet PDF File ZXTP2012G PDF File

ZXTP2012G
ZXTP2012G

Overview
www.
DataSheet4U.
com ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.
5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES • Extremely low equivalent on-resistance; RSAT = 39mV at 5A • 5.
5 amps continuous current • Up to 15 amps peak current • Very low saturation voltages • Excellent gain characteristics specified up to 10 Amps SOT223 APPLICATIONS • DC - DC converters • MOSFET gate drivers • Charging circuits • Power switches • Motor control PINOUT ORDERING INFORMATION DEVICE ZXTP2012GTA ZXTP2012GTC REEL SIZE 7” 13” TAPE WIDTH 12mm embossed QUANTITY PER REEL 1,000 units 4,000 units DEVICE MARKING ZXTP 2012 TOP VIEW ISSUE 1 - JUNE 2005 1 SEMICONDUCTORS ZXTP2012G ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT -100 -60 -7 -5.
5 -15 3.
0 24 1.
6 12.
8 -55 to +150 UNIT V V V A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R ⍜ JA VALUE 42 UNIT °C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.
6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.
6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - JUNE 2005 SEMICONDUCTORS 2 ZXTP2012G CHARACTERISTICS ISSUE 1 - JUNE 2005 3 SEMICONDUCTORS ZXTP2012G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage ...


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