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STP22NE10L

Part Number	STP22NE10L
Manufacturer	ST Microelectronics
Description	N-CHANNEL STripFET POWER MOSFET
Published	Feb 25, 2007
Detailed Description	www.DataSheet4U.com ® STP22NE10L N - CHANNEL 100V - 0.07 Ω - 22A TO-220 STripFET™ POWER MOSFET TYPE STP22NE10L s s s ...
Datasheet	STP22NE10L PDF File

Overview

www.
DataSheet4U.
com ® STP22NE10L N - CHANNEL 100V - 0.
07 Ω - 22A TO-220 STripFET™ POWER MOSFET TYPE STP22NE10L s s s V DSS 100 V R DS(on) < 0.
085 Ω ID 22 A TYPICAL RDS(on) = 0.
07 Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS ID ID I DM ( •) P tot E AS ( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature o Value 100 100 ± 20 22 14 88 90 0.
6 250 -65 to 175 175 ( 1) starting Tj = 25 oC, ID =22A , VDD = 50V Unit V V V A A A W W /o C mJ o o C C (•) Pulse width limited by safe operating area November 1999 1/8 STP22NE10L THERMAL DATA R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature F or Soldering Purpose 1.
67 62.
5 300 o o C/W C/W o C ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min.
100 1 10 ± 100 Typ.
Max.
Unit V µA µA nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V T c =125 oC ON (∗) Symbo l V GS(th) R DS(o...

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STP22NE10L N-CHANNEL STripFET POWER MOSFET - ST Microelectronics

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