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STP8NK85Z

ST Microelectronics
Part Number STP8NK85Z
Manufacturer ST Microelectronics
Description N-CHANNEL Zener-Protected SuperMESH MOSFET
Published Feb 25, 2007
Detailed Description www.DataSheet4U.com STP8NK85Z STF8NK85Z N-CHANNEL 850V -1.1Ω - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET Ta...
Datasheet PDF File STP8NK85Z PDF File

STP8NK85Z
STP8NK85Z

Overview
www.
DataSheet4U.
com STP8NK85Z STF8NK85Z N-CHANNEL 850V -1.
1Ω - 6.
7A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET Table 1: General Features TYPE STP8NK85Z STF8NK85Z s s s s s s s Figure 1: Package ID 6.
7A 6.
7A Pw 150 W 35 W VDSS 850 V 850 V RDS(on) <1.
4 Ω <1.
4 Ω TYPICAL RDS(on) = 1.
1Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 2 TO-220 TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES s SMPS Figure 2: Internal Schematic Diagram Table 2: Order Codes SALES TYPE STP8NK85Z STF8NK85Z MARKING P8NK85Z F8NK85Z PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE Rev.
5 September 2005 1/12 STP8NK85Z - STF8NK85Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter TO-220 Value TO-220FP Unit V V V 6.
7 (*) 4.
3 (*) 26.
7 (*) 35 0.
28 A A A W W/°C KV V/ns 2500 V °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.
5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 6.
7 4.
3 26.
7 150 1.
20 850 850 ± 30 4000 4.
5 -55 to 150 -55 to 150 ( ) Pulse width limited by safe operating area (1) ISD ≤ 6.
7A, di/dt ≤200A/µs, VDD = 80% V(BR)DSS (*) Limited only by maximum tempera...


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