DatasheetsPDF.com

MRF5S19090HR3

Part Number	MRF5S19090HR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Feb 26, 2007
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19090H Rev. 2, 5/2006 RF Power Field...
Datasheet	MRF5S19090HR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF5S19090H Rev.
2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
• Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 18 Watts Avg.
, Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 14.
5 dB Drain Efficiency — 25.
8% IM3 @ 2.
5 MHz Offset — - 37 dBc in 1.
2288 MHz Bandwidth ...

Similar Datasheet

MRF5S19090HR3 RF Power Field Effect Transistors - Freescale Semiconductor
MRF5S19090HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)