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MRF5S19130HSR3

Part Number	MRF5S19130HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Feb 26, 2007
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field...
Datasheet	MRF5S19130HSR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev.
2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
• Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, Pout = 26 Watts Avg.
, Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 13 dB Drain Efficiency — 25% IM3 @ 2.
5 MHz Offset — - 37 dBc in 1.
2288 MHz Bandwidth ACPR @ 885 kHz Offset — - 51 dB in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 110 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 V Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S19130HR3 MRF5S19130HSR3 1930- 1990 MHz, 26 W AVG.
, 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S19130HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S19130HSR3 Table 1.
Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C Symbol VDSS VGS PD Tstg TC TJ CW Value - 0.
5, +65 - 0.
5, +15 438 2.
50 - 65 to +150 150 200 160 1 Unit Vdc Vdc W W/°C °C °C °C W W/°C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 115 W CW Case Temperature 78°C, 26 W CW Symbol RθJC Value (1,2) 0.
40 0.
46 Unit °C/W 1.
MTTF ...

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MRF5S19130HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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