DatasheetsPDF.com

MRF5S19150SR3

Motorola
Part Number MRF5S19150SR3
Manufacturer Motorola
Description RF Power Field Effect Transistors
Published Feb 26, 2007
Detailed Description www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S...
Datasheet PDF File MRF5S19150SR3 PDF File

MRF5S19150SR3
MRF5S19150SR3

Overview
www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF5S19150/D MRF5S19150R3 RF Power Field Effect Transistors MRF5S19150SR3 The RF MOSFET Line N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.
9 to 2.
0 GHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
• Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, Pout = 32 Watts, IDQ = 1400 mA, f1 = 1958.
75 MHz, f2 = 1961.
25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.
2288 MHz Channel Bandwidth Carrier.
Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz.
Distortion Products Measured over 1.
2288 MHz Bandwidth at f1 - 2.
5 MHz and f2 +2.
5 MHz.
Peak/Avg.
= 9.
8 dB @ 0.
01% Probability on CCDF.
Output Power — 32 Watts Avg.
Power Gain — 14 dB Efficiency — 26% ACPR — - 50 dB IM3 — - 36.
5 dBc • Internally Matched, Controlled Q, for Ease...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)