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HY5V26CLF

Hynix Semiconductor
Part Number HY5V26CLF
Manufacturer Hynix Semiconductor
Description (HY5V26CxF) 4 Banks X 2M X 16bits Synchronous DRAM
Published Mar 6, 2007
Detailed Description www.DataSheet4U.com HY5V26C(L/S)F 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION Preliminary The Hynix HY5V26C(L/S...
Datasheet PDF File HY5V26CLF PDF File

HY5V26CLF
HY5V26CLF

Overview
www.
DataSheet4U.
com HY5V26C(L/S)F 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION Preliminary The Hynix HY5V26C(L/S)F is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY5V26C(L/S)F is organized as 4banks of 2,097,152x16 HY5V26C(L/S)F is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8, or full page), and the burst count sequence(sequential or interleave).
A burst of read or write cycles in progress can be terminated by a burst terminate command or can be int...


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