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NAND01G-B2B

ST Microelectronics
Part Number NAND01G-B2B
Manufacturer ST Microelectronics
Description (NAND0xG-B2x) NAND Flash Memory
Published Mar 9, 2007
Detailed Description www.DataSheet4U.com NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Featur...
Datasheet PDF File NAND01G-B2B PDF File

NAND01G-B2B
NAND01G-B2B

Overview
www.
DataSheet4U.
com NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.
8V/3V, NAND Flash Memory Features ■ High Density NAND Flash memories – – Up to 2 Gbit memory array Cost effective solutions for mass storage applications x8 or x16 bus width Multiplexed Address/ Data Pinout compatibility for all densities FBGA ■ NAND interface – – – TSOP48 12 x 20mm ■ ■ Supply voltage: 1.
8V/3.
0V Page size – – x8 device: (2048 + 64 spare) Bytes x16 device: (1024 + 32 spare) Words ■ ■ VFBGA63 9.
5 x 12 x 1mm VFBGA63 9 x 11 x 1mm ■ Block size – – x8 device: (128K + 4K spare) Bytes x16 device: (64K + 2K spare) Words Random access: 25µs (max) Sequential access: 30ns (min) Page program time: 200µs (typ) Serial Number option Data protection – – Hardware Block Locking Hardware Program/Erase locked during Power transitions 100,000 Program/Erase cycles 10 years Data Retention ■ Page Read/Program – – – ■ Data integrity – – ■ ■ ■ ■ ■ ■ Copy Back Program mode Cache Program and Cache Read modes Fast Block Erase: 2ms (typ) Status Register Electronic Signature Chip Enable ‘don’t care’ Product List Reference NAND01G-B2B ■ ■ ECOPACK® packages Development tools – – – Error Correction Code models Bad Blocks Management and Wear Leveling algorithms Hardware simulation models Table 1.
Part Number NAND01GR3B2B, NAND01GW3B2B NAND01GR4B2B, NAND01GW4B2B(1) NAND02GR3B2C, NAND02GW3B2C NAND02G-B2C 1.
x16 organization only available for MCP Products.
NAND02GR4B2C, NAND02GW4B2C(1) November 2006 Rev 3 1/62 www.
st.
com 1 Contents NAND01G-B2B, NAND02G-B2C Contents 1 2 Description .
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7 Memory array organization .
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13 2.
1 Bad blocks .
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13 3 Signals description .
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