DatasheetsPDF.com

IRG4BC10SDPBF

International Rectifier
Part Number IRG4BC10SDPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Mar 14, 2007
Detailed Description www.DataSheet4U.com PD -94904 IRG4BC10SDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Featu...
Datasheet PDF File IRG4BC10SDPBF PDF File

IRG4BC10SDPBF
IRG4BC10SDPBF

Overview
www.
DataSheet4U.
com PD -94904 IRG4BC10SDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Standard Speed CoPack IGBT VCES = 600V • Extremely low voltage drop 1.
1Vtyp.
@ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
• Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package • Lead-Free • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs .
Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Con...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)