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SIE806DF

Part Number	SIE806DF
Manufacturer	Vishay Siliconix
Description	N-Channel 30-V (D-S) MOSFET
Published	Mar 21, 2007
Detailed Description	www.DataSheet4U.com SPICE Device Model SiE806DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET CHARACTERISTICS • N-Channe...
Datasheet	SIE806DF PDF File

Overview

www.
DataSheet4U.
com SPICE Device Model SiE806DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet.
Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 74165 S-60243Rev.
A, 20-Feb-06 www.
vishay.
com 1 SPICE Device Model SiE806DF Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Condition Simulated Data 1.
1 3290 0.
0014 0.
0017 180 0.
83 Measured Data Unit VGS(th) ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 µA VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.
5 V, ID = 25 A VDS = 15 V, ID = 25 A IS = 10 A V A 0.
0015 0.
0017 130 0.
90 Ω S V Drain-Source On-State Resistancea Forward Transconductancea Forward Voltagea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Char...

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SIE806DF N-Channel 30-V (D-S) MOSFET - Vishay Siliconix

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