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IRF3007LPBF

Part Number	IRF3007LPBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Mar 21, 2007
Detailed Description	Typical Applications l Industrial Motor Drive Features l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Sw...
Datasheet	IRF3007LPBF PDF File

Overview

Typical Applications l Industrial Motor Drive Features l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G Description This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (6 sigma) IAR EAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current R...

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IRF3007LPBF HEXFET Power MOSFET - International Rectifier

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