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RD30HVF1

Part Number	RD30HVF1
Manufacturer	Mitsubishi Electric
Description	Silicon MOSFET Power Transistor
Published	Mar 21, 2007
Detailed Description	www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 D...
Datasheet	RD30HVF1 PDF File

Overview

www.
DataSheet4U.
com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 DRAWING 22.
0+/-0.
3 18.
0+/-0.
3 7.
2+/-0.
5 7.
6+/-0.
3 4-C1 RoHS Compliance, DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.
7dB @Vdd=12.
5V,f=175MHz High Efficiency: 60%typ.
2 3 R1.
6 14.
0+/-0.
4 6.
6+/-0.
3 FEATURES 1 APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets.
2.
3+/-0.
3 2.
8+/-0.
3 0.
10 3.
0+/-0.
4 5.
1+/-0.
5 PIN 1.
Drain 2.
Source 3.
Gate UNIT:mm RoHS COMPLIANT RD30HVF1-101 is a RoHS c...

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RD30HVF1 Silicon MOSFET Power Transistor - Mitsubishi Electric

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