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K8D6316UTM

Samsung semiconductor
Part Number K8D6316UTM
Manufacturer Samsung semiconductor
Description (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
Published Mar 23, 2007
Detailed Description www.DataSheet4U.com K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Me...
Datasheet PDF File K8D6316UTM PDF File

K8D6316UTM
K8D6316UTM

Overview
www.
DataSheet4U.
com K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory Revision History Revision No.
History 0.
0 1.
0 1.
1 Initial Draft Final Specification Revised - Release the stand-by current from typ.
5uA(max.
18uA) to typ.
10uA(max.
30uA).
Not support 48TSOP1 Package Not support 16M/16M BANK partition Support 48TSOP1 Package Support 48TSOP1 Lead Free Package Support 48FBGA Leaded/Lead Free Package Draft Date January 10, 2002 May 22, 2002 June 18, 2003 Remark Preliminary Final 1.
2 November 18, 2003 1.
3 1.
4 1.
5 July 22, 2004 September 16, 2004 March 16, 2005 1 Revision 1.
5 March 2005 K8D6x16UTM / K8D6x16UBM 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory FEATURES • Single Voltage, 2.
7V to 3.
6V for Read and Write operations • Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 16Mb / 48Mb • Secode(Security Code) Block : Extra 64K Byte block • Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby Mode/Auto Sleep Mode : 10µA • WP/ACC input pin - Allows special protection of two outermost boot blocks at VIL, regardless of block protect status - Removes special protection of two outermost boot block at VIH, the two blocks return to normal block protect status - Program time at VHH : 9µs/word • Erase Suspend/Resume • Unlock Bypass Program • Hardware RESET Pin • Command Register Operation • Block Group Protection / Unprotection • Supports Common Flash Memory Interface • Industrial Temperature : -40°C to 85°C • Endurance : 100,000 Program/Erase Cycles Minimum • Data Retention : 10 years • Package : 48 Pin TSOP1 : 12 x 20 mm / 0.
5 mm Pin pitch 48 Ball TBGA : 6 x 9 mm / 0.
8 mm Ball pitch 48 Ball FBGA : 6 x 9 mm / 0.
8 mm Ball pitch FLASH MEMORY GENERAL DESCRIPTION The K8D6...


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