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MRF6S21100HR3

Part Number	MRF6S21100HR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Mar 23, 2007
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field...
Datasheet	MRF6S21100HR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev.
7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications.
• Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 950 mA, Pout = 23 Watts Avg.
, Full Frequency Band, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 15.
9 dB Drain Efficiency — 27.
6% IM3 @ 10 MHz Offset — - 37 dBc in 3.
84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39.
5 dBc in 3.
84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S21100HR3 MRF6S21100HSR3 2110 - 2170 MHz, 23 W AVG.
, 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S21100HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S21100HSR3 Table 1.
Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg Tc TJ Value - 0.
5, +68 - 0.
5, +12 - 65 to +150 150 200 Unit Vdc Vdc °C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 77°C, 23 W CW Symbol RθJC Value (1,2) 0.
45 0.
52 Unit °C/W 1.
MTTF calculator available at http://www.
freescale.
com/rf.
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