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FCH47N60

Fairchild Semiconductor
Part Number FCH47N60
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 26, 2007
Detailed Description FCH47N60 — N-Channel SuperFET® MOSFET FCH47N60 N-Channel SuperFET® MOSFET 600 V, 47 A, 70 mΩ Features • 650 V @ TJ = 15...
Datasheet PDF File FCH47N60 PDF File

FCH47N60
FCH47N60

Overview
FCH47N60 — N-Channel SuperFET® MOSFET FCH47N60 N-Channel SuperFET® MOSFET 600 V, 47 A, 70 mΩ Features • 650 V @ TJ = 150°C • Typ.
RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ.
Qg = 210 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 420 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Solar Inverter • AC-DC Power Supply December 2013 Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.
This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D G D S TO-247 G MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain to Source Voltage Drain Current Drain Current Continuous (TC = 25°C) Continuous (TC = 100°C) Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C) Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
S (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FCH47N60_F133 600 47 29.
7 141 ±30 1800 47 41.
7 4.
5 417 3.
33 -55 to +150 300 FCH47N60_F133 0.
3 0.
24 41.
7 Unit V A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W °C/W °C/W ©2009 Fairchild Semiconductor Corporation FCH47N60 Rev.
C2 1 www.
fairchildsemi.
com FCH47N60 — N-Channel SuperFET® MOSFET Package Markin...


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