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SIE808DF

Vishay Siliconix
Part Number SIE808DF
Manufacturer Vishay Siliconix
Description N-Channel 20-V (D-S) MOSFET
Published Mar 29, 2007
Detailed Description www.DataSheet4U.com SPICE Device Model SiE808DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET CHARACTERISTICS • N-Channe...
Datasheet PDF File SIE808DF PDF File

SIE808DF
SIE808DF

Overview
www.
DataSheet4U.
com SPICE Device Model SiE808DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physi...


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