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RJP020N06

Rohm
Part Number RJP020N06
Manufacturer Rohm
Description Drive Nch MOS FET
Published Mar 29, 2007
Detailed Description www.DataSheet4U.com RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 zStructure Silicon N-channel MOS FET zExter...
Datasheet PDF File RJP020N06 PDF File

RJP020N06
RJP020N06

Overview
www.
DataSheet4U.
com RJP020N06 Transistors 2.
5V Drive Nch MOS FET RJP020N06 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) MPT3 4.
5 1.
6 0.
5 1.
5 zFeatures 1) Low On-resistance.
2) Low voltage drive (2.
5V drive).
(1) (2) (3) 1.
0 2.
5 4.
0 0.
4 0.
4 1.
5 0.
5 1.
5 3.
0 0.
4 zApplications Switching zPackaging specifications Package Type RJP020N06 Code Basic ordering unit (pieces) Taping T100 1000 (1)Gate (2)Drain (3)Source Abbreviated symbol : LS zInner circuit DRAIN GATE ∗2 ∗1 SOURCE ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Tstg Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a 40 40 0.
7mm ceramic board Limits 60 ±12 ±2.
0 ±8.
0 2.
0 8.
0 500 2 ∗2 150 −55 to +150 Unit V V A A A A mW W °C °C zThermal resistance Parameter Channel to ambient ∗ When mounted on a 40 40 0.
7mm ceramic board + + Symbol Rth(ch-a) Limits 250 62.
5 ∗ Unit °C/W °C/W + + 1/2 RJP020N06 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min.
− 60 − 0.
8 − − − 1.
5 − − − − − − − − − − Typ.
− − − − 165 170 210 − 160 50 45 8 18 40 20 5 1 2.
5 Max.
±10 − 1 1.
5 240 250 300 − − − − − − − − 10 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±12V, VDS=0V ID= 1mA, VGS=0V VDS= 60V, V...


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