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2N5886

ON Semiconductor
Part Number 2N5886
Manufacturer ON Semiconductor
Description (2N5883 - 2N5886) Complementary Silicon High-Power Transistors
Published Apr 2, 2007
Detailed Description www.DataSheet4U.com 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Si...
Datasheet PDF File 2N5886 PDF File

2N5886
2N5886

Overview
www.
DataSheet4U.
com 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications.
Features http://onsemi.
com • Low Collector−Emitter Saturation Voltage − • • • • VCE(sat) = 1.
0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.
0 mAdc (max) at Rated Voltage Excellent DC Current Gain − hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product − ft = 4.
0 MHz (min) at IC = 1.
0 Adc Pb−Free Packages are Available* 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 80 VOLTS, 200 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎ Î ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ MAXIMUM RATINGS (Note 1) Rating Symbol VCEO Value 60 80 60 80 Unit Vdc Collector−Emitter Voltage 2N5883, 2N5885 2N5884, 2N5886 Collector−Base Voltage 2N5883, 2N5885 2N5884, 2N5886 VCB Vdc Emitter−Base Voltage Collector Current − Continuous Peak Base Current VEB IC 5.
0 25 50 Vdc Adc IB 7.
5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 200 1.
15 W W/°C °C TJ, Tstg – 65 to + 200 TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM 2N588xG AYYWW MEX 2N588x G A YY WW MEX THERMAL CHARACTERISTICS Characteristic Symbol qJC Max Unit = Device Code x = 3, 4, 5, or 6 = Pb−Free Package = Assembly Location = Year = Work Week = Country of Origin Thermal Resistance, Junction−to−Case 0.
875 °C/W Stresses exceeding Maximum Ratings may damage the device.
Maximu...


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