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MRF9200LR3

Part Number	MRF9200LR3
Manufacturer	Freescale Semiconductor
Description	N-Channel Enhancement-Mode Lateral MOSFETs
Published	Apr 5, 2007
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data MRF9200L Rev. 1, 12/2004 RF Power Field Effect Transistors...
Datasheet	MRF9200LR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data MRF9200L Rev.
1, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment.
• Typical Single−Carrier N−CDMA Performance @ 880 MHz: VDD = 26 Volts, IDQ = 2400 mA, Pout = 40 Watts Avg.
, IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13).
Channel Bandwidth = 1.
2288 MHz.
Peak/ Avg.
Ratio = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 17.
5 dB Dr...

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