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MRFG35010ANT1

Part Number	MRFG35010ANT1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistor
Published	Apr 5, 2007
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arseni...
Datasheet	MRFG35010ANT1 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev.
0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications.
Characterized from 500 to 5000 MHz.
Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 130 mA, Pout = 1 Watt Avg.
, 3550 MHz, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 10 dB Efficiency — 25% ACPR @ 5 MHz Offset — - 43 dBc in 3.
84 MHz Channel Bandwidth • 9 Watts P1dB @ 3550 MHz, CW • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • RoHS Compliant • In Tape and Reel.
T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35010ANT1 3.
5 GHz, 9 W, 12 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.
5 PLASTIC Table 1.
Maximum Ratings Rating Drain - Sourc...

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MRFG35010ANT1 RF Power Field Effect Transistor - Freescale Semiconductor

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