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BAV70LT3

ON Semiconductor
Part Number BAV70LT3
Manufacturer ON Semiconductor
Description (BAV70LT1 / BAV70LT3) Monolithic Dual Switching Diode Common Cathode
Published Apr 6, 2007
Detailed Description www.DataSheet4U.com ON Semiconductort Monolithic Dual Switching Diode Common Cathode MAXIMUM RATINGS (EACH DIODE) Rati...
Datasheet PDF File BAV70LT3 PDF File

BAV70LT3
BAV70LT3

Overview
www.
DataSheet4U.
com ON Semiconductort Monolithic Dual Switching Diode Common Cathode MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc BAV70LT1 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA PD 556 300 2.
4 RqJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C CASE 318–08, STYLE 9 SOT–23 (TO–236AB) 3 CATHODE ANODE 1 2 ANODE DEVICE MARKING BAV70LT1 = A4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (Note 3) (VR = 25 Vdc, TJ = 150...


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