DatasheetsPDF.com

STN93003

ST Microelectronics
Part Number STN93003
Manufacturer ST Microelectronics
Description High voltage fast-switching PNP power transistor
Published Apr 6, 2007
Detailed Description www.DataSheet4U.com STN93003 High voltage fast-switching PNP power transistor General features ■ ■ ■ ■ ■ Medium voltag...
Datasheet PDF File STN93003 PDF File

STN93003
STN93003


Overview
www.
DataSheet4U.
com STN93003 High voltage fast-switching PNP power transistor General features ■ ■ ■ ■ ■ Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed SOT-223 plastic package for surface mounting circuits Tape and reel packing 1 2 2 3 ■ SOT-223 Applications ■ ■ Electronics ballasts for fluorescent lighting Switch mode power supplies Internal schematic diagram Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STN93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STN83003, its complementary NPN transistor.
Order codes Part Number STN93003 Marking N93003 Package SOT-223 Packing Tape & reel May 2006 Rev 1 1/10 www.
st.
com 10 STN93003 Contents 1 2 Electrical ratings .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
3 Electrical characteristics .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
4 2.
1 2.
2 Electrical characteristics (curves) .
.
5 Test circuits .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
6 3 Package mechanical data .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
7 2/10 STN93003 1 Electrical ratings Table 1.
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 0.
75A, tp < 10µs, T j < 150°C) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25°C Storage temperature Max.
operating junction temperat...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)