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HN1B01FDW1T1

ON Semiconductor
Part Number HN1B01FDW1T1
Manufacturer ON Semiconductor
Description Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount
Published Apr 7, 2007
Detailed Description www.DataSheet4U.com HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http...
Datasheet PDF File HN1B01FDW1T1 PDF File

HN1B01FDW1T1
HN1B01FDW1T1

Overview
www.
DataSheet4U.
com HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.
com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A − Machine Model: C Pb−Free Package is Available (6) (5) (4) Q1 Q2 (1) (2) (3) MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.
0 200 Unit Vdc Vdc Vdc mAdc 6 5 4 3 12 SC−74 CASE 318F STYLE 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
R9 M THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 380 150 −55 to +150 Unit mW °C °C R9 = Device Code M = Date Code ORDERING INFORMATION Device HN1B01FDW1T1 HN1B01FDW1T1G Package SC−74 Shipping† 3000/Tape & Reel SC−74 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev.
2 Publication Order Number: HN1B01FDW1T1/D HN1B01FDW1T1 Q1: PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector−Emitter Breakdown Voltage (IC = 2.
0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB...


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