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M366S6453ET

Samsung semiconductor
Part Number M366S6453ET
Manufacturer Samsung semiconductor
Description SDRAM Unbuffered Module
Published Apr 7, 2007
Detailed Description www.DataSheet4U.com 128MB, 256MB, 512MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based ...
Datasheet PDF File M366S6453ET PDF File

M366S6453ET
M366S6453ET

Overview
www.
DataSheet4U.
com 128MB, 256MB, 512MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 256Mb E-die 62/72-bit Non ECC/ECC Revision 1.
4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.
4 May 2004 128MB, 256MB, 512MB Unbuffered DIMM Revision History Revision 1.
0 (June, 2003) - First release Revision 1.
1 (September, 2003) - Corrected Typo Revision 1.
2 (February, 2004) - Corrected typo.
Revision 1.
3 (March.
2004) - Modified DC Characteristics Notes.
Revision 1.
4 (May, 2004) - Added Note 5.
sentense of tRDL parameter SDRAM Rev.
1.
4 May 2004 128MB, 256MB, 512MB Unbuffered DIMM 168Pin Unbuffered DIMM based on 256Mb E-die (x8, x16) Ordering Information Part Number M366S1654ETS-C7A M366S3253ETS-C7A M366S3253ETU-C7A M374S3253ETS-C7A M374S3253ETU-C7A M366S6453ETS-C7A M366S6453ETU-C7A M374S6453ETS-C7A M374S6453ETU-C7A Density 128MB 256MB 256MB 256MB 256MB 512MB 512MB 512MB 512MB Organization 16M x 64 32M x 64 32M x 64 32M x 72 32M x 72 64M x 64 64M x 64 64M x 72 64M x 72 Component Composition 16Mx16(K4S561632E) * 4EA 32Mx8(K4S560832E) * 8EA 32Mx8(K4S560832E) * 8EA 32Mx8(K4S560832E) * 9EA 32Mx8(K4S560832E) * 9EA 32Mx8(K4S560832E)*16EA 32Mx8(K4S560832E)*16EA 32Mx8(K4S560832E)*18EA 32Mx8(K4S560832E)*18EA 54-TSOP(II) Component Package SDRAM Height 1,000mil 1,375mil 1,125mil 1,375mil 1,125mil 1,375mil 1,125mil 1,375mil 1,125mil Operating Frequencies 7A @CL3 Maximum Clock Frequency CL-tRCD-tRP(clock) 133MHz(7.
5ns) 3-3-3 @CL2 100MHz(10ns) 2-2-2 Feature Burst mode operation Auto & self refresh capability (8192 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.
3V ± 0.
3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Serial presence detect with EEPROM • • • • • Rev.
1.
4 May 2004 128MB, ...


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