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MBR160

ON Semiconductor
Part Number MBR160
Manufacturer ON Semiconductor
Description (MBR150 / MBR160) Axial Lead Rectifiers
Published Apr 8, 2007
Detailed Description www.DataSheet4U.com MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs th...
Datasheet PDF File MBR160 PDF File

MBR160
MBR160

Overview
www.
DataSheet4U.
com MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features http://onsemi.
com • • • • • Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction These are Pb−Free Devices* SCHOTTKY BARRIER RECTIFIERS 1.
0 AMPERE − 50 AND 60 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.
4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Lead Temperature for Soldering Purposes: • Leads are Readily Solderable 260°C Max.
for 10 Seconds Polarity: Cathode Indicated by Polarity Band DO−41 AXIAL LEAD CASE 59 STYLE 1 Value 50 60 VRWM VR MBR150 MBR160 VR(RMS) IO 35 42 1.
0 V A A MBR1x0 YYWW G G Unit V MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage MBR150 MBR160 Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol VRRM MARKING DIAGRAM Average Rectified Forward Current (Note 1) (VR(equiv) v 0.
2 VR(dc), TL = 90°C, RqJA = 80°C/W, P.
C.
Board Mounting, TA = 55°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) IFSM 25 (for one cycle) − 65 to +150 A TJ, Tstg °C A = Assembly Location MBR1x0 = Device Code x = 5 or 6 Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS (Notes 1 and 2) Characteristic Thermal Resistance, Junction−to−Ambient Symbol RqJA Max 80 Unit °C/W Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are ...


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