DatasheetsPDF.com

MV2209

ON Semiconductor
Part Number MV2209
Manufacturer ON Semiconductor
Description (MV2101 - MV2209) Silicon Tuning Diodes
Published Apr 10, 2007
Detailed Description www.DataSheet4U.com MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These de...
Datasheet PDF File MV2209 PDF File

MV2209
MV2209


Overview
www.
DataSheet4U.
com MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.
They provide solid−state reliability in replacement of mechanical tuning methods.
Also available in a Surface Mount Package up to 33 pF.
Features http://onsemi.
com • • • • • 6.
8−100 pF, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES 3 Cathode SOT−23 2 Cathode 1 Anode 1 Anode High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance − 10% Complete Typical Design Curves Pb−Free Packages are Available MAXIMUM RATINGS Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25°C MMBV21xx Derate above 25°C @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range MV21xx LV2209 TJ Tstg Symbol VR IF PD 225 1.
8 280 2.
8 +150 −55 to +150 mW mW/°C mW mW/°C °C °C Value 30 200 Unit Vdc mAdc 1 2 3 TO−92 MARKING DIAGRAMS SOT−23 (TO−236) CASE 318−08 STYLE 8 xxx M G G 1 Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
xxx = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) MMBV21xx, MV21xx LV2209 Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.
0 Vdc, f = 1.
0 MHz) Symbol V(BR)R 30 25 IR TCC − − − − − 280 − − 0.
1 − mAdc ppm/°C Min Typ Max Unit Vdc 1 2 TO−92 (...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)