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MMDF2C03HD

ON Semiconductor
Part Number MMDF2C03HD
Manufacturer ON Semiconductor
Description Power MOSFET
Published Apr 10, 2007
Detailed Description MMDF2C03HD Power MOSFET 2 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra l...
Datasheet PDF File MMDF2C03HD PDF File

MMDF2C03HD
MMDF2C03HD

Overview
MMDF2C03HD Power MOSFET 2 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.
They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time.
These devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
Features • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO-8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Mounting Information for SO-8 Package Provided • This is a Pb−Free Device MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Gate−to−Source Voltage VGS ± 20 Vdc Drain Current − Continuous N−Channel ID P−Channel 4.
1 A 3.
0 Drain Current − Pulsed N−Channel IDM 21 P−Channel 15 Operating and Storage Temperature Range Total Power Dissipation @ TA= 25°C (Note 2) Thermal Resistance, Junction−to−Ambient (Note 2) TJ, Tstg PD RqJA − 55 to 150 2.
0 62.
5 °C W °C/W Single Pulse Drain−to−Source Avalanche EAS Energy − Starting TJ = 25°C (VDD = 30 V, VGS = 5.
0 V, Peak IL = 9.
0 Apk, L = 8.
0 mH, RG = 25 W) N−Channel (VDD = 30 V, VGS = 5.
0 V, Pe...


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