DatasheetsPDF.com

DTA143T

UTC
Part Number DTA143T
Manufacturer UTC
Description DIGITAL TRANSISTORS
Published Apr 10, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD. DTA143T PNP SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)  FEAT...
Datasheet PDF File DTA143T PDF File

DTA143T
DTA143T

Overview
UNISONIC TECHNOLOGIES CO.
, LTD.
DTA143T PNP SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)  FEATURES * Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to allow positive input.
 EQUIVALENT CIRCUIT  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package DTA143TG-AE3-R DTA143TG-AE3-R SOT-23 DTA143TG-AL3-R DTA143TG-AL3-R SOT-323 DTA143TG-AN3-R DTA143TG-AN3-R SOT-523 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BEC BEC BEC Packing Tape Reel Tape Reel Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2018 Unisonic Technologies Co.
, Ltd 1of 3 QW-R206-058.
G DTA143T PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -50 -5 V V Collector Current Collector Power Dissipation SOT-23/SOT-323 SOT-523 IC PC -100 200 150 mA mW mW Junction Temperature TJ +150 C Storage Temperature TSTG -40 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-base breakdown voltage BVCBO IC=-50μA Collector-emitter breakdown voltage BVCEO IC=-1mA Emitter-base breakdown voltage BVEBO IE=-50μA Collector cutoff current ICBO VCB=-50V Emitter cutoff current IEBO VEB=-4V Collector-emitter saturation voltage VCE(SAT) IC=-5mA, IB= -0.
25mA DC Current Gain hFE VCE=-5V, IC= -1mA Input resistance R1 Transition frequency fT Note: Transition frequency of the device VCE=-10V, IE=5mA, f=100MHz (Note) MIN TYP MAX UNIT -50 V -50 V -5 V -0.
5 μA -0.
5 μA -0.
3 V 100 250 600 3.
29 4.
7 6...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)