DatasheetsPDF.com

DTA143E

UTC
Part Number DTA143E
Manufacturer UTC
Description PNP DIGITAL TRANSISTOR
Published Apr 13, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD DTA143E PNP SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)  FEATU...
Datasheet PDF File DTA143E PDF File

DTA143E
DTA143E


Overview
UNISONIC TECHNOLOGIES CO.
, LTD DTA143E PNP SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)  FEATURES * Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to allow positive input.
 EQUIVALENT CIRCUIT  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - DTA143EG-AE3-R - DTA143EG-AL3-R - DTA143EG-AN3-R - DTA143EG-AQ3-R DTA143EL-T92-B DTA143EG-T92-B DTA143EL-T92-K DTA143EG-T92-K Note: Pin Assignment: G: GND, O: Out, I: In Package SOT-23 SOT-323 SOT-523 SOT-723 TO-92 TO-92 Pin Assignment 123 GIO GIO GIO GIO GO I GO I Packing Tape Reel Tape Reel Tape Reel Tape Reel Tape Box Bulk  MARKING SOT-23 / SOT-323 / SOT-523 AE3E www.
unisonic.
com.
tw Copyright © 2015 nisonic Technologies Co.
, Ltd TO-92 1 of 3 QW-R206-057.
G DTA143E PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC -50 V Input Voltage Output Current SOT-523 VIN IOUT IC(MAX) -30~+10 -100 -100 150 V mA mW Power Dissipation SOT-23/SOT-323 SOT-723 PD 200 mW 125 mW TO-92 625 mW Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Input Voltage VIN(OFF) VIN(ON) VCC =-5V, IOUT =-100μA VOUT =-0.
3V, IOUT =-20mA Output Voltage VOUT(ON) IOUT/IIN =-10mA/-0.
5mA Input Current IIN VIN=-5V Output Current IOUT(OFF) VCC =-50V, VIN =0V DC Current Gain hFE VOUT =-5V, IOUT =-10mA Input Resistance R1 Resistance Ratio Transition Frequency R2/R1 fT VCE =-10V, IE =-5mA, f=100MHz (Note) Note: Transition frequency of the device MIN TYP MAX UNIT -3 -0.
5 V -0.
...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)