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NTGD1100L

ON Semiconductor
Part Number NTGD1100L
Manufacturer ON Semiconductor
Description Power MOSFET
Published Apr 13, 2007
Detailed Description MOSFET - Power, P-Channel, Load Switch with Level-Shift, TSOP-6 8 V, +3.3 A NTGD1100L The NTGD1100L integrates a P and ...
Datasheet PDF File NTGD1100L PDF File

NTGD1100L
NTGD1100L

Overview
MOSFET - Power, P-Channel, Load Switch with Level-Shift, TSOP-6 8 V, +3.
3 A NTGD1100L The NTGD1100L integrates a P and N−Channel MOSFET in a single package.
This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed.
The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench technology.
The N−Channel, with an external resistor (R1), functions as a level−shift to drive the P−Channel.
The N−Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.
5 V.
The NTGD1100L operates on supply lines from 1.
8 to 8.
0 V and can drive loads up to 3.
3 A with 8.
0 V applied to both VIN and VON/OFF Features • Extremely Low RDS(on) Load Switch MOSFET • Level Shift MOSFET is ESD Protected • Low Profile, Small Footprint Package • VIN Range 1.
8 to 8.
0 V • ON/OFF Range 1.
5 to 8.
0 V • ESD Rating of 2000 V • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Input Voltage (VDSS, P−Ch) VIN 8.
0 V ON/OFF Voltage (VGS, N−Ch) VON/OFF 8.
0 V Continuous Load Current Steady TA = 25°C IL (Note 1) State TA = 85°C ±3.
3 A ±2.
4 Power Dissipation (Note 1) Steady TA = 25°C PD State TA = 85°C 0.
83 W 0.
43 Pulsed Load Current tp = 10 ms ILM ±10 A Operating Junction and Storage Temperature TJ, −55 to °C TSTG 150 Source Current (Body Diode) ESD Rating, MIL−STD−883D HBM (100 pF, 1.
5 kW) IS ESD −1.
0 A 2.
0 kV Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.
127 in sq [1 oz] including traces).
www.
onsemi.
com V(BR)DSS 8.
0 ...


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