DatasheetsPDF.com

IRGMC40U

International Rectifier
Part Number IRGMC40U
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Apr 13, 2007
Detailed Description PD -90717B IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Electrically Isolated and Hermetically Sealed ...
Datasheet PDF File IRGMC40U PDF File

IRGMC40U
IRGMC40U

Overview
PD -90717B IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.
0V @VGE = 15V, IC = 20A Description n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current applications.
The performance of various IGBTs varies greatly with frequency.
Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handlingwww.
DataSheet4U.
com capability of the device.
TO-254AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight Max.
600 35* 20 152 152 ± 20 125 50 -55 to + 150 300 (0.
063in.
/1.
6mm from case for 10s) 9.
3 (typical) Units V A V W °C g *Current is limited by pin diameter Thermal Resistance Parameter R thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.
21 — 1.
0 — 48 Test Conditions °C/W For footnotes refer to the last page www.
irf.
com 1 02/20/02 IRGMC40U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Collector-to-Emitter Breakdown Voltage 600 ––– Emitter-to-Collector Breakdown Voltage ➂ 24 ––– ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakd...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)