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IRHE93130

International Rectifier
Part Number IRHE93130
Manufacturer International Rectifier
Description (IRHE9130 / IRHE93130) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Published Apr 13, 2007
Detailed Description PD - 90881C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE9130...
Datasheet PDF File IRHE93130 PDF File

IRHE93130
IRHE93130

Overview
PD - 90881C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE9130 100K Rads (Si) IRHE93130 300K Rads (Si) RDS(on) 0.
30 Ω 0.
30 Ω ID -6.
5A -6.
5A IRHE9130 100V, P-CHANNEL REF: MIL-PRF-19500/630 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY QPL Part Number JANSR2N7389U JANSF2N7389U International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to www.
DataSheet4U.
com DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
LCC...


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