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MW6S004NT1

Part Number	MW6S004NT1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistor
Published	Apr 13, 2007
Detailed Description	Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 2, 2/2007 RF Power Field Effect Transistor N - ...
Datasheet	MW6S004NT1 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MW6S004N Rev.
2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz.
Suitable for analog and digital modulation and multicarrier amplifier applications.
• Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain — 18 dB Drain Efficiency — 33% IMD — - 34 dBc • Typical Two - Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain — 19 dB Drain Efficiency — 33% IMD — - 39 dBc • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power...

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MW6S004NT1 RF Power Field Effect Transistor - Freescale Semiconductor

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