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2SB1713

Rohm
Part Number 2SB1713
Manufacturer Rohm
Description Bipolar transistor
Published Apr 14, 2007
Detailed Description 2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 zApplications Low frequency amplification, driver zExternal d...
Datasheet PDF File 2SB1713 PDF File

2SB1713
2SB1713

Overview
2SB1713 Transistors -3A / -12V Bipolar transistor 2SB1713 zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm) MPT3 4.
5 1.
6 0.
5 1.
5 zFeatures 1) Collector current is high.
2) Low collector-emitter saturation voltage.
(Typ.
= -250mV, at IC = -1.
5A, IB = -30mA) (1)Base (1) (2) (3) 1.
0 2.
5 4.
0 0.
4 0.
4 1.
5 0.
5 1.
5 3.
0 0.
4 zStructure PNP epitaxial planar silicon transistor (2)Collector (3)Emitter Abbreviated symbol : XW zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −15 −12 −6 −3 −6 0.
5 2 150 −55 to +150 ∗1 ∗2 ∗3 zPackaging specifications Unit V V www.
DataSheet4U.
com Package Packaging type Code Part No.
2SB1713 Basic ordering unit (pieces) MPT3 Taping T100 1000 V A W °C °C ∗1 Pw=1ms, Pulsed.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.
7mm ceramic board.
zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) ∗ hFE fT Cob Min.
Typ.
Max.
Unit −12 −15 −6 − − − 270 − − − − − − − − 280 30 − − − −100 −100 680 − − nA mV − pF V IC= −1mA IC= −10µA IE= −10µA VCB= −15V VEB= −6V Conditions −120 −250 IC/IB= −1.
5A/ −30mA VCE= −2V, IC= −500mA VCB= −10V , IE=0mA , f=1MHz MHz VCE= −2V, IE=500mA , f=100MHz 1/2 2SB1713 Transistors zElectrical characteristics curves COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 25˚C − 40˚C 125˚C 0.
1 25˚C BASE SATURATION VOLTAGE : VBE(sat) (V) 125˚C 1 10 DC CURRENT GAIN : hFE 100 1 25˚C − 40˚C − 40˚C 0.
01 125˚C VCE=−2V Pulsed 10 0.
001 0.
01 0.
1 1 10 IC/IB=20/...


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