DatasheetsPDF.com

7N60

UTC
Part Number 7N60
Manufacturer UTC
Description N-CHANNEL MOSFET
Published Apr 14, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 7N60 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power...
Datasheet PDF File 7N60 PDF File

7N60
7N60

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 7N60 7.
4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
 FEATURES * RDS(ON) < 1.
0Ω @ VGS = 10V * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 7N60L-TA3-T 7N60G-TA3-T TO-220 7N60L-TF3-T 7N60G-TF3-T TO-220F 7N60L-TF1-T 7N60G-TF1-T TO-220F1 7N60L-TF2-T 7N60G-TF2-T TO-220F2 7N60L-TF3T-T 7N60G-TF3T-T TO-220F3 7N60L-T2Q-T 7N60G-T2Q-T TO-262 7N60L-TQ2-T 7N60G-TQ2-T TO-263 7N60L-TQ2-R 7N60G-TQ2-R TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 9 QW-R502-076.
P 7N60  MARKING INFORMATION PACKAGE TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-262 TO-263 MARKING Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 9 QW- R502-076.
P 7N60 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 V ±30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR ID IDM EAS EAR dv/dt 7.
4 A 7.
4 A 29.
6 A 530 mJ 14.
2 mJ 4.
5 V/ns TO-220/TO-262/TO-263 142 Power Dissipation TO-220F/TO-220F1 TO-220F3 PD 48 W TO-220F2 50 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratin...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)