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DTC143E

UTC
Part Number DTC143E
Manufacturer UTC
Description NPN DIGITAL TRANSISTOR
Published Apr 14, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., DTC143E NPN EPITAXIAL SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATU...
Datasheet PDF File DTC143E PDF File

DTC143E
DTC143E

Overview
UNISONIC TECHNOLOGIES CO.
, DTC143E NPN EPITAXIAL SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES *Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit).
*The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input They also have the advantage of almost completely eliminating parasitic effects.
*Only the on / off conditions need to be set for operation, making device design easy.
1 2 3 SOT-323 EQUIVALENT CIRCUIT IN R1 OUT MARKING *Pb-free plating product number:DTC143EL R2 GND IN GND OUT CE3 PIN CONFIGURATION PIN NO.
PIN NAME 1 GND 2 IN 3 OUT www.
DataSheet4U.
com ORDERING INFORMATION Order Number Normal Lead free DTC143E-AL3-R DTC143EL-AL3-R Package SOT-323 Packing Tape Reel www.
unisonic.
com.
tw Copyright © 2005 Unisonic Technologies Co.
, 1 QW-R220-015.
A DTC143E PARAMETER Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature NPN EPITAXIAL SILICON TRANSISTOR SYMBOL VCC VIN IC PD TJ TSTG RATINGS 50 -10 ~ +30 100 200 150 -40 ~ +150 UNIT V V mA mW ℃ ℃ ABSOLUATE MAXIUM RATINGS (Ta = 25℃) ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.
) SYMBOL VI(off) Input Voltage VI(ON) Output Voltage VO(ON) Input Current II Output Current IO(off) DC Current Gain GI Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT *Transition frequency of the device PARAMETER TEST CONDITIONS VCC= 5V, IO=100μA VO= 0.
3V, IO= 20mA IO/II= 10mA / 0.
5 mA VI= 5V VCC= 50V , VI=0V VO= 5V, IO= 10mA MIN 3 0.
1 0.
3 1.
8 0.
5 6.
11 1.
2 TYP MAX 0.
5 UNIT V V mA μA kΩ MHz 20 3.
29 0.
8 VCE= 10 V, IE= -5mA, f=100MHz * 4.
7 1 250 UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 QW-R220-015.
A DTC143E ■ NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS Fig.
1 Input voltage vs.
output current (ON characterristics) 100 50 Fig.
2 Output current vs Input vo...


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