DatasheetsPDF.com

MMBT1616A

UTC
Part Number MMBT1616A
Manufacturer UTC
Description NPN TRANSISTOR
Published Apr 15, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR  DESCRI...
Datasheet PDF File MMBT1616A PDF File

MMBT1616A
MMBT1616A

Overview
UNISONIC TECHNOLOGIES CO.
, LTD MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR  DESCRIPTION * Audio frequency power amplifier * Medium speed switching 3 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION Order Number Lead Free Halogen Free MMBT1616L-x-AE3-R MMBT1616G-x-AE3-R MMBT1616AL-x-AE3-R MMBT1616AG-x-AE3-R Note: Pin Assignment: B: Base E: Emitter Collector Package SOT-23 SOT-23 Pin Assignment 123 BEC BEC Packing Tape Reel Tape Reel MMBT1616G-x-AE3-R (1) Packing Type (2) Package Type (3) Rank (4) Green Package (1) R: Tape Reel (2) AE3: SOT-23 (3) x: refer to Classification of hFE1 (4) G: Halogen Free and Lead Free, L: Lead Free  MARKING UTC MMBT1616 UTC MMBT1616A www.
unisonic.
com.
tw Copyright © 2018 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R206-036.
J MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage MMBT1616 MMBT1616A VCBO 60 120 V Collector to Emitter Voltage MMBT1616 MMBT1616A VCEO 50 60 V Emitter to Base Voltage VEBO 6 V Collector Current DC IC 1A Collector Current Pulse IC 2A Total Collector Dissipation PD 350 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Pulse width  10ms, Duty cycle < 50%.
 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base Emitter On Voltage DC Current Gain Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time  CLASSIFICATION OF hFE1 SYMBOL ICBO IEBO VCE(SAT) VBE(SAT) VBE(ON) hFE1 hFE2 fT Cob ton ts tf TEST CONDITIONS VC...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)