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UP1868

UTC
Part Number UP1868
Manufacturer UTC
Description LOW SATURATION VOLTAGE PNP POWER TRANSISTOR
Published Apr 15, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UP1868 LOW SATURATION VOLTAGE PNP POWER TRANSISTOR „ FEATURES PNP SILICON TRANSISTOR * ...
Datasheet PDF File UP1868 PDF File

UP1868
UP1868

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UP1868 LOW SATURATION VOLTAGE PNP POWER TRANSISTOR „ FEATURES PNP SILICON TRANSISTOR * Low saturation voltage with equivalent on-resistance be RCE(SAT) about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.
*Pb-free plating product number: UP1868L „ ORDERING INFORMATION Order Number Normal Lead Free Plating UP1868-AA3-F-R UP1868L-AA3-F-R Package SOT-223 www.
DataSheet4U.
com Pin Assignment 1 2 3 B C E Packing Tape Reel www.
unisonic.
com.
tw Copyright © 2005 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R207-015,A UP1868 „ ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PNP SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current IC(PEAK) -20 A Continuous Collector Current IC -6 A Power Dissipation PC 3 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (at Ta = 25℃ unless otherwise specified) PARAMETER MIN -15 -12 -6 MAX UNIT V V V -55 -100 mV -132 -160 mV -440 mV -1050 -1200 mV -950 -1050 mV -10 nA -1.
0 µA -10 nA 1000 TYP SYMBOL TEST CONDITIONS BVCBO IC=-100µA Breakdown Voltage (Note) BVCEO IC=-10mA BVEBO IE=-100µA IC=-500mA,IB=-5mA Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-50mA (Note) IC=-6A, IB=-250mA Base-Emitter Saturation Voltage VBE(SAT) IC=-6A, IB=-250mA Base-Emitter Turn-On Voltage (Note) VBE(ON) VCE=-1V, IC=-6A VCB=-12V Collector Cut-Off Current ICBO VCB=-12V,Ta=100℃ Emitter Cut-Off Current IEBO VEB=-6V hFE1 VCE=-1V , IC=-10mA hFE2 VCE=-1V , IC=-500mA DC Current Gain (Note) hFE3 VCE=-1V , IC=-5mA hFE4 VCE=-1V , IC=-10A Current Gain Bandwidth Product fT VCE=-10V, IC=-100mA, f=50MHz Output Capacitance Cob VCB=-20V, f=1MHz tON IC=-4A, IB1=-400mA Sw...


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