DatasheetsPDF.com

UT137E

UTC
Part Number UT137E
Manufacturer UTC
Description TRIACS
Published Apr 15, 2007
Detailed Description UTC UT137E TRIACS DESCRIPTION Passivated , sensitive gate triacs in a plastic envelope, intended for use in general purp...
Datasheet PDF File UT137E PDF File

UT137E
UT137E


Overview
UTC UT137E TRIACS DESCRIPTION Passivated , sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.
1 TRIAC SYMBOL MT2 TO-220 G MT1 1:MT1 2:MT2 3:GATE ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive Peak Off-State Voltage UT137E-5 UT137E-6 UT137E-8 RMS On-state Current Full sine wave; Tmb≤102°C www.
DataSheet4U.
com SYMBOL VDRM RATINGS 500* 600* 800 8 UNIT V IT(RMS) A Non-Repetitive Peak.
On-State Current Full sine wave; Tj=25°C prior to surge ITSM A t=20ms 65 t=16.
7ms 71 I2t For Fusing (t=10ms) I2t 21 A2s Repetitive Rate of Rise of On-state Current after Triggering ITM=12A;IG=0.
2A,dIG/dt=0.
2A/µs T2+ G+ 50 dIT /dt A/µs T2+ G50 T2- G50 T2- G+ 10 Peak Gate Voltage VGM 5 V Peak Gate Current IGM 2 A Peak Gate Power PGM 5 W Average Gate Power (Over any 20ms period) PG(AV) 0.
5 W Operating Junction Temperature Tj 125 °C Storage Temperature Tstg -40~150 °C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state.
The rate of rise of current should not exceed 6A/µs.
UTC UNISONIC TECHNOLOGIES CO.
, LTD.
1 QW-R401-012,C UTC UT137E THERMAL RESISTANCES PARAMETER Thermal Resistance Junction to Mounting Base Full cycle Half cycle Thermal Resistance Junction to Ambient In free air TRIAC SYMBOL Rth j-mb Rth j-a 60 MIN TYP MAX 2.
0 2.
4 UNIT K/W K/W STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified) PARAMETER Gate Trigger Current IGT SYMBOL TEST CONDITIONS VD=12V, IT=0.
1A T2+ G+ T2+ GT2- GT2- G+ VD=12V, IGT=0.
1A T2+ G+ T2+ GT2- GT2- G+ VD=12V, IGT=0.
1A IT=10A VD=12V, IT=0.
1A VD=400V, IT=0.
1A, Tj=125°C VD=VDRM(max) , Tj=125°C MIN TYP 2.
5 4.
0 5.
0 11 3.
0 14 3.
0 4.
0 2.
5 1.
3 0.
7 0.
4 0.
1 MAX 10 10 10 25 25 35 25 35 20 1.
65 1.
5 0.
5 UNIT mA Latching Current IL mA Holding Current On-State Voltage Gate Trigger Voltage Off-state Leakage Current IH VT VGT...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)