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MSC3930-BT1

ON Semiconductor
Part Number MSC3930-BT1
Manufacturer ON Semiconductor
Description NPN RF Amplifier Transistor
Published Apr 21, 2007
Detailed Description MSC3930−BT1 Preferred Device NPN RF Amplifier Transistor • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 ...
Datasheet PDF File MSC3930-BT1 PDF File

MSC3930-BT1
MSC3930-BT1

Overview
MSC3930−BT1 Preferred Device NPN RF Amplifier Transistor • Pb−Free Package is Available http://onsemi.
com COLLECTOR 3 Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 30 20 5.
0 30 Unit Vdc Vdc Vdc mAdc 2 BASE 3 MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 −55 ~ +150 Unit mW °C °C 1 2 1 EMITTER MARKING DIAGRAM VB MG G 1 Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not www.
DataSheet4U.
com normal operating conditions) and are not valid simultaneously.
If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
SOT−323/SC−70 CASE 419 STYLE 3 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector−Base Cutoff Current (VCB = 10 Vdc, IE = 0) DC Current (VCB = 10 Vdc, IC = −1.
0 mAdc) Collector−Gain — Bandwidth Product (VCB = 10 Vdc, IE = −1.
0 mAdc) Reverse Transistor Capacitance (VCE = 10 Vdc, IC = 1.
0 mAdc, f = 10.
7 MHz) Gain(1) Symbol ICBO hFE 70 fT 150 140 — MHz Min — Max 0.
1 Unit μAdc — VB = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MSC3930−BT1 MSC3930−BT1G Package SC−70 SC−70 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel Cre — 1.
5 pF †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
1.
Pulse Test: Pulse Width ≤ 300 μs, D.
C.
≤ 2%.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2005 1 October, 2005 − Rev.
3 Publication Order Number: MSC3930−BT1/D MSC3930−BT1 PACKAGE DIMENSIONS SC−70 ...


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