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MTD10N10EL

ON Semiconductor
Part Number MTD10N10EL
Manufacturer ON Semiconductor
Description Power Field Effect Transistor DPAK
Published Apr 21, 2007
Detailed Description MTD10N10EL TMOS E−FET™ Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This...
Datasheet PDF File MTD10N10EL PDF File

MTD10N10EL
MTD10N10EL

Overview
MTD10N10EL TMOS E−FET™ Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Features VDSS 100 V http://onsemi.
com RDS(ON) TYP 0.
22 W ID MAX 10...


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