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NTLTS3107P

Part Number	NTLTS3107P
Manufacturer	ON Semiconductor
Description	Power MOSFET
Published	Apr 21, 2007
Detailed Description	NTLTS3107P Power MOSFET Features −20 V, −8.3 A, Single P−Channel, Micro8 Leadless Package • • • • • Low RDS(on) for Ext...
Datasheet	NTLTS3107P PDF File

Overview

NTLTS3107P Power MOSFET Features −20 V, −8.
3 A, Single P−Channel, Micro8 Leadless Package • • • • • Low RDS(on) for Extended Battery Life Surface Mount Micro8 Leadless for Improved Thermal Performance Low Profile (<1.
0 mm) Optimal for Portable Designs Low Turn−On Voltage This is a Pb−Free Device http://onsemi.
com V(BR)DSS −20 V RDS(on) TYP 12.
2 mW @ −4.
5 V 15.
6 mW @ −2.
5 V 26.
2 mW @ −1.
8 V P−Channel MOSFET S Value −20 $8.
0 −8.
3 −6.
0 −12 PD ID PD IDM TJ, TSTG IS TL 1.
6 3.
3 −5.
9 −3.
7 0.
8 −25 −55 to 150 −1.
6 260 W A °C A °C Drain Symbol RqJA RqJA RqJA Max 80 38 160 Unit °C/W °C/W °C/W Drain Drain Drain W A 1 Micro8 Leadless CASE 846C A Y WW G www.
DataSheet4U.
com ID MAX −8.
3 A Applications • Optimized for Load Management Applications • Charge Control in Battery Powered Systems • Cell Phones, DSC, Notebooks, Portable Games, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t v 10 s Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current (Note 1) Steady State t v 10 s Steady State TA = 25°C TA = 85°C TA = 25°C tp = 10 ms TA = 25°C TA = 85°C TA = 25°C TA = 25°C Symbol VDSS VGS ID Unit V V A G D MARKING DIAGRAM 1 3107 AYWW G Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 8 7 6 5 1 THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t v 10 s (Note 1) Junction−to−Ambient – Steady State (Note 2) Source Source Source Gate Drain 2 3 4 Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
If these limits are exceeded, device functional op...

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NTLTS3107P Power MOSFET - ON Semiconductor

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