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IRFI4024H-117P

International Rectifier
Part Number IRFI4024H-117P
Manufacturer International Rectifier
Description DIGITAL AUDIO MOSFET
Published Apr 25, 2007
Detailed Description DIGITAL AUDIO MOSFET PD - 97254 IRFI4024H-117P Features Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Integrated half-bridge package Reduces the...
Datasheet PDF File IRFI4024H-117P PDF File

IRFI4024H-117P
IRFI4024H-117P


Overview
DIGITAL AUDIO MOSFET PD - 97254 IRFI4024H-117P Features Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Integrated half-bridge package Reduces the part count by half Facilitates better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI Can delivery up to 100W per channel into 6Ω load in full-bridge configuration amplifier Lead-free package VDS RDS(ON) typ.
@ 10V Qg typ.
Qsw typ.
RG(int) typ.
TJ max Key Parameters g 55 48 8.
9 4.
3 2.
3 150 V m: nC nC Ω °C TO-220 Full-Pak 5 PIN G1, G2 D1, D2 S1, S2 Description Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications.
It www.
DataSheet4U.
com consists of two power MosFET switches connected in half-bridge configuration.
The latest process is used to achieve low on-resistance per silicon area.
Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI.
These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings g Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C EAS TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energyd Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max.
55 ±20 11 6.
9 44 14 5.
4 0.
11 7.
4 -55 to +150 300 (1.
6mm from case) 10 lbf•in (1.
1N•m) Units V A W W/°C mJ °C Thermal Resistance g Parameter RθJC RθJA Junction-to-Case f Junction-to-Ambient (free air) Typ.
––– ––– Max.
9.
21 65 Units °C/W www.
irf.
com ...



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